Abstract
In addition to quantized conductance plateaus at integer multiples of 2e2∕h, the differential conductance G=dI∕dV shows plateaus at 0.25(2e2∕h) and 0.75(2e2∕h) under applied source-drain bias in In0.75Ga0.25As quantum wires defined by insulated split gates. This observation is consistent with a spin-gap model for the 0.7 structure. Using a tilted magnetic field to induce Landau level crossings, the g factor was measured to be ∼9 by the coincidence method. This material, with a mobility of 1.8×105cm2∕Vs at a carrier density of 1.4×1011cm−2, may prove useful for further study of electron-electron interaction effects in quantum wires.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.