Abstract
The optical properties of n-doped InxGa1−xAs/AlAs pseudomorphic quantum wells grown on GaAs(001) are investigated as a function of layer thickness and indium concentration. The nature of interband and intersubband transitions is clarified using an improved tight-binding model and a combination of low-temperature photoluminescence spectroscopy and intersubband absorption studies. A type I→type II crossover is found to occur in very narrow wells. Moreover, for appropriate quantum-well parameters, tailoring of the intersubband transition wavelength down to the 1.2 μm range appears feasible while retaining the type I character of the band alignment. These results provide a valid framework for the implementation of InxGa1−xAs/AlAs heterostructures for ultrafast optical communication applications.
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