Abstract
Two types of nanostructures in SiC matrices are studied. Heterocrystalline structures are based on different polytypes, e.g. 3C-SiC and 4H-SiC. Multi-quantum well structures with 3C wells embedded in 4H barriers show photoluminescence (PL) that can be interpreted in terms of a type-II heterostructure character and a built-in electric field due to the pyroelectricity of 4H. Germanium is incorporated in 4H-SiC matrices in form of nanometer-sized crystals. Their size, crystal structure and orientation depend on the preparation conditions. A strong size-dependent luminescence from quantum states is predicted.
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