Quantum size effects and transport phenomena in thin Bi layers

Abstract

For thin Bi films with thicknesses d=10–60 nm the dependences of the Hall coefficient, Seebeck coefficient, electrical conductivity , and Hall carrier mobility on d have been obtained at room temperature. Distinct oscillations of the transport properties with period Δ d=(5±1) nm have been observed in the thickness range d=25–60 nm and attributed to quantization of the energy spectrum of holes. It has been suggested that a deep minimum observed in the thickness dependences of the kinetic coefficients at d∼25 nm is connected with the manifestation of the electronic spectrum quantization and/or manifestation of a semimetal–semiconductor transition. The experimental data are in good agreement with the results of theoretical calculations.