Abstract
The Hall effect and the Shubnikov–de Haas (SdH) effect have been investigated in magnetic fields up to 54 T in p-(Bi1−xSbx)2Te3 (0 ≤ x ≤ 1.0) Sn doped single crystals. Doping of (Bi1−xSbx)2Te3 with tin has shown that Sn exhibits acceptor properties in all crystals. We discuss the valence band structure of (Bi1−xSbx)2Te3 with the upper valence band (light hole band (LHB)), the lower valence band (heavy hole band (HHB)) and Sn-induced impurity band (IB). The Hall resistivity ρH as a function of magnetic field shows quantization in the form of plateaus. The calculated Landau levels of the LHB with the best-fit parameters are in agreement with the experiment. The oscillation of ρH is due to the presence of the carrier reservoir. The impurity resonant band with a high density of states or the HHB with a higher hole effective mass serve as the reservoir.
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