Abstract
Droplet epitaxy is an alternative growth technique for several quantum nanostructures. Indium droplets are distributed randomly on GaAs substrates at low temperatures (120-350 'C). Under background pressure of group V elements, Arsenic and Phosphorous, InAs and InP nanostructures are created. Quantum rings with isotropic shape are obtained at low temperature range. When the growth thickness is increased, quantum rings are transformed to quantum dot rings. At high temperature range, anisotropic strain gives rise to quantum rings with square holes and non-uniform ring stripe. Regrowth of quantum dots on these anisotropic quantum rings, Quadra-Quantum Dots (QQDs) could be realized. Potential applications of these quantum nanostructures are also discussed.
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