Abstract

Preferable quantum dot (QD) nanostructure for quantum computation based on quantum cellular automata (QCA) is laterally close-packed quantum dot molecular (QDM) having 4 QDs at the corners of square configuration. We called this 4 QDs-set as quadra-quantum dots (QQDs). Aligned QQDs with 2 electron-confinements work like a wire for digital information transmission by Coulomb repulsion force which is high speed and consumes little power. Combination of QQDs in line and their cross-over work as logic gates and memory bits. We have developed a Molecular Beam Epitaxial (MBE) growth technique call “Droplet Epitaxy” for several quantum nanostructures such as quantum rings (QRs), quantum dot rings (QDRs). In this presentation, we prepare QRs with 20 ML In-Ga (15:85) droplet at 390 °C and droplet growth rate of 1ML/s. Arsenic flux (7–8 × 10 −6 Torr) is then exposed for InGaAs crystallization at 200 °C for 5 min. During droplet epitaxy at high value of droplet thickness and high temperature, out-diffusion from the centre of droplets occurs under anisotropic stain. This leads to quantum ring structures having non-uniform ring stripes and deep square-shaped nanoholes. Using these peculiar QRs as templates, 4 QDs situating at each corner of square shape are regrown. Two of these 4 QDs are aligned either [1 1 ¯ 0] or [1 1 0] which are preferable crystallographic directions of QD alignment in general.

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