Abstract
A tool for the simulation of resonant tunneling diodes (RTDs) has been developed. This is based on the solution of the quantum Liouville equation in the active region of the device and the Boltzman transport equation in the regions adjacent to the contacts by means of a Monte Carlo algorithm. By accurately coupling both approaches to current transport, we have developed a quantum simulation tool that allows the use of simulation domains much larger and realistic than those previously considered, without a significant increase in computational burden. The main characteristics expected for the considered devices are clearly obtained, thus supporting the validity of our tool for the simulation of RTDs.
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