Abstract
In this paper, we describe theoretically how the quantum-mechanical carrier distribution in the flat-band condition influences the flat-band capacitance. It is numerically demonstrated that the semiclassical method overestimates the flat-band capacitance when the quantum-mechanical effect is significant. It is also shown that the quantum-mechanical flat-band capacitance at the gate poly-Si/SiO2 interface significantly influences the total flat-band capacitance and oxide charge evaluation.
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