Abstract
The electron transport behavior in single Pt(Ga)∕C nanowire fabricated using focused ion beam was studied. The Pt(Ga)∕C nanowire consists of <3nm Pt particles, which are sheathed with Ga+-doped amorphous carbon layers. The temperature dependence of the nanowire resistivity measured under four-probe method indicated the weak localization effect resulting from large disorder in the system. Moreover, low temperature resistivity of the nanowire increased with decrease of its temperature, following a −T law, which could be interpreted by electron-electron interaction in weak localization regime. An anomalous positive magnetoresistance was observed as well, which was ascribed to quantum interference effect arising from Coulomb interactions and weak localization in the strong spin-orbit scattering limit.
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