Abstract
We measure two-color quantum interference control of photocurrent injection in erbium-doped GaAs. The signal size is the same order of magnitude as from a low-temperature grown GaAs sample, and much larger than in a semi-insulating GaAs sample. Thus erbium-doped GaAs could be useful for fabrication of monolithic optical carrier-envelope phase detectors. We also describe a prism-based two-color interferometer useful for minimizing stray light in quantum interference control measurements.
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