Abstract
The peculiarity of planar quantum magnetotransport in the type II broken-gap p-GaInAsSb/p-InAs heterostructures at high magnetic fields has been investigated. The structure of the hybridized energy spectrum of a two-dimensional semimetal channel at a single type II broken-gap heterointerface was considered in dependence on the composition of the quaternary solid solution. A transition from a conducting state to a dielectric state (quantum insulator) for a 2D-semimetal channel at the heteroboundary was observed in quantizing magnetic fields under the condition of simultaneous filling of the first Landau levels for 2D-electron and interface hole states.
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