Abstract

Quantum dots (QDs) photonic devices based on III-V compound semiconductor are very attractive optoelectronic due to their thermal independence, low power consumption, and high-speed modulation. We have developed a defect-free, ultimate top-down nanofabrication process for sub-20-nm-diameter GaAs quantum nanodisks (NDs) by employing a bio template and neutral beam etching, and produced 8-nm-thick GaAs NDs embedded in an AlGaAs barrier regrown by the metal organic vapour phase epitaxy (MOVPE). We successfully fabricated a light emitting diode structure and observed the light emission from the quantum energy levels of NDs.

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