Abstract
Quantum dots (QDs) photonic devices based on III-V compound semiconductor are attractive optoelectronic devices due to their low power consumption, temperature stability, and high-speed modulation. We have developed a defect-free, top-down fabrication process for sub-20-nm-diameter GaAs quantum nanodisks (NDs) by employing a biotemplate and neutral beam etching and produced 4- and 8-nm-thick GaAs NDs embedded in an AlGaAs barrier regrown using metalorganic vapor phase epitaxy (MOVPE). The optical properties were characterized by using time-resolved photoluminescence spectroscopy. We confirmed that the emission energies and the transient behavior of the PL as a function of temperature were strongly affected by the quantum confinement effects of the NDs.
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