Abstract
A quantum efficiency model of complementary metal-oxide semiconductor image sensors based on Shockley–Read–Hall and Auger recombination is developed using the technology computer-aided design tool, and the quantum efficiency degradation after irradiation is analyzed. By simulating the surface recombination velocity and depletion region width of the photodiode, the decrease in the quantum efficiency of complementary metal-oxide semiconductor image sensors under short and long incident light wavelengths is found to be caused by the increase in the surface recombination velocity and capture of optical carriers by radiation-induced defects in the epitaxial layer, respectively. In addition, a method to reduce the quantum efficiency degradation behavior of an irradiated pixel is discussed.
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