Abstract

The Onsager model of geminate recombination is generalized to the case of dispersive hopping transport in amorphous materials. Both thermally stimulated over-barrier and tunneling jumps are taken into account as possible modes of carrier drift and diffusion in the Coulomb electric field and external electric field. Two possible channels of recombination are considered: field-stimulated carrier drift to the Coulomb center and tunneling recombination.

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