Abstract
Biomaterials such as fibroin have drawn wide attention as switching medium in transient memristors. However, due to unique degradability and inhomogeneous microstructure of fibroin film, fibroin-based memristor usually showed unstable resistive switching behaviors. Here, we show that using MoS <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> quantum dots to modify inert electrodes can significantly reduce the randomness of the device, thereby achieving an excellent cycling endurance with narrow switching voltage distribution. Furthermore, we proposed a percolation model of conductive filaments to reveal the interrelationship between electrode morphology and switching characteristics. Our work reveals the microscopic origin of the instability of the transient memristor and exhibits effective approaches to improve the reliability of the device.
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