Abstract
GaAs-based vertical cavity surface-emitting lasers (VCSELs) using self-organized quantum dots (QDs) emitting at 1.3 μm demonstrate device-acceptable parameters. Threshold currents below 2 mA , operation voltage below 2 V and differential efficiency in excess of 60% are demonstrated. Maximum CW output power of 0.8 mW is realized for 8 μm oxide-confined aperture device. Using fully oxidized top and bottom distributed Bragg reflectors allows reducing the total thickness of the structure to only 5– 6 μm . Lifetime and temperature cycling tests confirm high reliability of the device. Confinement of nonequilibrium carriers in the QDs facilitates applications in VCSEL arrays with ultrasmall apertures and microcavities. Low homogeneous line width in single QDs makes potentially possible realization of single QD VCSELs.
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