High-Power VCSEL Arrays

Abstract

We review recent developments on high-power , high-efficiency two-dimensional vertical-cavity surface-emitting laser (VCSEL) arrays emitting around 808 and 980 nm. Selectively oxidized, bottom-emitting single VCSEL emitters with 50% power conversion efficiency were developed as the basic building block of these arrays . More than 230 W of continuous-wave (CW) power is demonstrated from a \(5\,\hbox{mm} \,{\times}\, 5\,\hbox{mm} \) array chip. In quasi-CW mode, smaller array chips exhibit 100 W output power, corresponding to more than \(3.5\,\hbox{kW}/\hbox{cm}^{2}\) of power-density. High-brightness VCSEL pumps have been developed, delivering a fiber output power of 40 W, corresponding to a brightness close to \(50\,\hbox{kW}/(\hbox{cm}^{2}\, \hbox{sr}).\) High-energy VCSEL arrays in the milli-Joule range have also been developed. Many of the advantages of low-power single VCSEL devices such as reliability , wavelength stability, low-divergence circular beam, and low-cost manufacturing are preserved for these high-power arrays . VCSELs thus offer an attractive alternative to the dominant edge-emitter technology for many applications requiring compact high-power laser sources.