Abstract
For InAs–GaAs based Quantum Dot Lasers emitting at 1300nm digital modulation showing an open eye pattern up to 12Gb/s at room temperature is demonstrated, at 10Gb/s the bit error rate is below 10−12 at −2dBm receiver power. Cut-off frequencies up to 20GHz are realised for lasers emitting at 1.1μm. Passively mode-locked QD lasers generate optical pulses with repetition frequencies between 5 and 50GHz, with a minimum Fourier limited pulse length of 3ps. The uncorrelated jitter is below 1ps. We use here deeply etched narrow ridge waveguide structures which show excellent performance similar to shallow mesa structures, but a circular far field at a ridge width of 1μm, improving coupling efficiency into fibers. No beam filamentation of the fundamental mode, low α-factors and strongly reduced sensitivity to optical feedback is observed. QD lasers are thus superior to QW lasers for any system or network.Quantum dot semiconductor optical amplifiers (QD SOAs) demonstrate gain recovery times of 120–140fs, 4–7 times faster than bulk/QW SOAs, and a net gain larger than 0.4dB/(mm×QD layer) providing us with novel types of booster amplifiers and Mach–Zehnder interferometers.These breakthroughs became possible due to systematic development of self-organized growth technologies.
Published Version
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