Abstract
We present first results from a micrometer sized micro-LED fabricated for the electroluminescence (EL) investigation of very few to one self-assembled quantum dot. Utilizing focussed ion beam (FIB) implantation we were able to fabricate a LED consisting of crossed p- and n-doped stripes of a few micrometer width. Confined between both stripes is a layer of quantum dots symmetrically embedded in a thin i-layer. We show that good quality quantum dots can be grown on FIB implemented regions and present first EL spectra which agree very well with PL measurements.
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