Abstract
This paper presents the experimental characteristics of 3-state n-MOS inverters utilizing Quantum Dot Gate (QDG) FETs. By employing FETs that have quantum dots in the gate region, particularly Si-SiOx cladded quantum dots and Ge-GeOx cladded quantum dots, intermediate states were observed in both variations of the device, both of which using the same architecture and mask set.
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More From: International Journal of High Speed Electronics and Systems
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