Abstract
The authors investigate the formation of quantum-dot crystal (QDC) defects during the growth of two-dimensional QDCs on flat surfaces. The flat surface is modulated by the periodic strain fields of a buried quantum-dot (QD) seed layer, which in turn is grown onto a patterned substrate surface. Two types of QDC defects, QD vacancies, and QD interstitials are observed whenever the QD density controlled by the growth conditions does not match the areal density of the patterned sites. Our kinetic Monte Carlo growth simulations take into account the realistic strain profile of buried QDs and are able to describe the occurrence of both types of QDC defects during the growth of seeded QDCs.
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