Abstract
We have grown thin films of Dy doped ZnO (Dy:ZnO) on sapphire substrate using pulsed laser deposition with Dy concentration varying from 0.05at.% to 1.8at.%. These as grown Dy:ZnO thin films were characterized using low temperature four probe electrical measurements (in the range ~300K to 4K). All the Dy:ZnO thin films showed metal like behavior with a transition from positive to negative temperature coefficient of resistivity (TCR) and again to positive TCR with an increase of Dy concentration. This anomaly in conduction mechanism was investigated by considering quantum corrections to classical Boltzmann conductivity. All the Dy:ZnO thin films also exhibited negative magneto-resistance that supported for a significant contribution of weak localization in quantum corrections to conductivity.
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