Abstract
A full-band cellular Monte Carlo (CMC) approach (Saraniti and Goodnick, 2000) is applied to simulation of electron transport in AlGaN/GaN HEMTs with quantum corrections included via the effective potential method. The full-band CMC transport model is based on a detailed model of the electron-phonon interactions in the wurtzite crystal structure using the rigid pseudo-ion model, where the anisotropic deformation potentials are derived from the electronic band structure, the atomic pseudopotential, and the phonon dispersion. Realistic polar-optical phonon, impurity, piezoelectric and dislocation scatterings are also included in the full-band CMC simulator, which shows good agreement with measured velocity-field data from pulsed I-V measurements at Arizona State University (Barker, 2002).
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