Abstract
Numerical simulations were performed to predict the electron energy levels and wave functions in periodically nanocorrugated free-standing InAs films. The obtained data show that in films thinner than $4\phantom{\rule{0.3em}{0ex}}\mathrm{nm}$ the lowest energy levels are due to the $X$-conduction-band valleys. In such films, the elastic strain gives rise to a periodic potential consisting of quantum wells about $1\phantom{\rule{0.3em}{0ex}}\mathrm{eV}$ deep, resulting from the strain-induced shift of the energy position of the $X$-valley minimum. The possibility of localization of electron states in the potential wells is shown.
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