Abstract
We investigated quantum confinement effects in Bi anti-dot thin films grown on anodized aluminium oxide templates. The pore wall widths (wBi) and thickness (t) of the films were tailored to have values longer or shorter than Fermi wavelength of Bi (λF = ∼40 nm). Magnetoresistance measurements revealed a well-defined weak antilocalization effect below 10 K. Coherence lengths (Lϕ) as functions of temperature were derived from the magnetoresistance vs field curves by assuming the Hikami-Larkin-Nagaoka model. The anti-dot thin film with wBi and t smaller than λF showed low dimensional electronic behavior at low temperatures where Lϕ(T) exceed wBi or t.
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