Abstract
We report the measurement of electroabsorption spectra from GaInNAs and GaInNAsSb quantum wells grown on GaAs showing quantum-confined Stark effect behavior suitable for optical modulation at 1300 and 1550nm wavelength, respectively. The high quality of our material is evidenced by sharp exciton resonances with a full width at half maximum <25meV at 295K, and peak absorption coefficient of 18 000cm−1 for GaInNAs and 34 800cm−1 for GaInNAsSb. Changes in absorption coefficient 10 000cm−1 with an applied electric field were measured. Device performance from these materials is expected to be comparable to or better than the competing material grown on InP.
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