Abstract
Recently, aluminum (Al) selective chemical vapour deposition (CVD) on the silicon (Si) surface has received much attention as promising technology for ULSI metallization. The key issue is using a dimethyl aluminum hydride (DMA1H) over the Si surface terminated by hydrogen (H). In this quantum chemical study, we discuss the reaction mechanism. The reaction of AlAl bond formation occurs prior to AlSi bond formation. The methyl group has an effect which suppresses the reactivity between Al and Si. Moreover, H 2 carrier gas increases the reactivity. These results are qualitatively in agreement with the experimental observations.
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