Abstract
The interaction of a hydrogen atom with the (111) face of silicon was studied by the MNDO method in a cluster approximation. The energy of adsorption of a hydrogen atom as well as the values of the barriers for its incorporation and desorption from the surface layer of silicon were calculated taking into account its structure relaxation. It was found that the hydrogen atom can penetrate into the crystal through its surface cavities.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
