Abstract

The potential energy surfaces of the two lowest-lying triplet electronic surfaces 3A'' and 3A' for the O(3P) + C2H2 reaction were theoretically reinvestigated, using various quantum chemical methods including CCSD(T), QCISD, CBS-QCI/APNO, CBS-QB3, G2M(CC,MP2), DFT-B3LYP and CASSCF. An efficient reaction pathway on the electronically excited 3A' surface resulting in H(2S) + HCCO(A2A') was newly identified and is predicted to play an important role at higher temperatures. The primary product distribution for the multistate multiwell reaction was then determined by RRKM statistical rate theory and weak-collision master equation analysis using the exact stochastic simulation method. Allowing for nonstatistical behavior of the internal rotation mode of the initial 3A'' adducts, our computed primary-product distributions agree well with the available experimental results, i.e., ca. 80% H(2S) + HCCO(X2A'' + A2A') and 20% CH2(X3B1) + CO(X1sigma+) independent of temperature and pressure over the wide 300-2000 K and 0-10 atm ranges. The thermal rate coefficient k(O + C2H2) at 200-2000 K was computed using multistate transition state theory: k(T) = 6.14 x 10(-15)T (1.28) exp(-1244 K/T) cm3 molecule(-1) s(-1); this expression, obtained after reducing the CBS-QCI/APNO ab initio entrance barriers by 0.5 kcal/mol, quasi-perfectly matches the experimental k(T) data over the entire 200-2000 K range, spanning 3 orders of magnitude.

Full Text
Paper version not known

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call