Quantum-Based Simulation Analysis of Scaling in Ultrathin Body Device Structures

Abstract

We present self-consistent solutions of ultrathin body device structures to understand the influence of quantum-mechanical confinement on the predictions of classical scaling theory. We show that two-dimensional (2-D) electrostatics considerations play a more dominant role than quantum-mechanical effects in the subthreshold behavior of ultrathin fully depleted silicon-on-insulator structures. We also show how modifications to the doping profile can be used to alleviate 2-D short-channel effects.