Abstract
A detailed study of emission mechanism is performed in undoped and Mg-doped InGaN∕GaN multiple quantum wells (MQWs) by means of injection-current- and temperature-dependent electroluminescence measurements. Two emission peaks corresponding to the recombination in InGaN quantum well are observed at high injection-current level in both MQWs. According to the emission behaviors with increasing injection current and decreasing temperature, in conjunction with the numerical calculations, these two peaks are tentatively assigned to be the interband transitions from the first quantized electron level to the first and second quantized heavy-hole levels (1e-1hh and 1e-2hh), respectively. Moreover, the energy separation of the interband transitions is reduced from 200to130meV by Mg dopant, which indicates that the quantized levels have been modified as a result of weakening of the polarization field.
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