Quantitativeness in laser-assisted atom probe analysis of boron and carbon codoped in silicon

Abstract

Boron and carbon codoped in polysilicon thin films and carbon implanted in silicon substrates have been examined by laser-assisted atom probe tomography (La-APT). Clusters of dopants were observed in annealed samples. Compared with the results obtained by secondary ion mass spectrometry (SIMS), significant miscounts of both boron and carbon were found in La-APT results. On the basis of measurements using two different La-APT systems, it was suggested that the insufficiency of the multihit capability of the detection systems is an important origin of the miscounts.