Abstract
Boron and carbon codoped in polysilicon thin films and carbon implanted in silicon substrates have been examined by laser-assisted atom probe tomography (La-APT). Clusters of dopants were observed in annealed samples. Compared with the results obtained by secondary ion mass spectrometry (SIMS), significant miscounts of both boron and carbon were found in La-APT results. On the basis of measurements using two different La-APT systems, it was suggested that the insufficiency of the multihit capability of the detection systems is an important origin of the miscounts.
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