Abstract
We propose using an effective Schottky barrier height determined from experimental data to approximate the contact resistance of Si solar cells. This model is used to explore the efficiency benefit that selective emitter (SE) solar cells provide over a homogeneous emitter (HE). Our simulations show that as paste technology improves, the selective emitter-induced efficiency benefit for the devices modeled in this study is reduced from a maximum of 0.43% absolute at a barrier height of 2.5 eV to basically no advantage at 1 eV. This technique can also be used in the optimization of homogeneous emitter solar cells, so that contact resistance may be considered in a dynamic way as emitter profiles are varied.
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