Abstract
Two sets of carriers reveal themselves in amorphous chalcogenide thin films subjected to high electric fields. The application to the samples of short high field pulses, in the range of tens of nanoseconds, shows the same conduction processes present as when applying pulses whose lengths are nearly a million times longer. The coupled carrier equations have been combined with a band model which assigns the carriers respectively to localized hopping or trapping states near the band edge and to extended states near the mobility edge to explain the conduction behaviour. The success of this theory, found earlier with long pulse measurements, continues with short pulse experiments. The theory is substantially free of adjustable parameters and gives numerical and functional agreement in 10 specific cases when applied to 7 experimental phenomena discovered with the short pulse experiments.
Published Version
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