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Abstract
A new model for the ionization depth distribution function has been proposed. Within the framework of this model full electron flux is considered to be divided into two fluxes propagating in forward and backward directions through a sample. The intensities of these fluxes can be derived on the basis of simple assumptions of electron-solid interactions. The approach can be effectively applied to a system with an arbitrary form of depth concentration profile. The obtained results are in reasonable agreement with Monte Carlo simulations and experimental results. Some mathematical techniques have been presented for quantitative analysis of thin films on substrates and element depth distribution.
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