Abstract
Impurity segregation at grain boundaries (GB) can be detected by EDS in a dedicated STEM. Quantification of the segregation requires not only quantification of the spectra but also consideration of the geometry of the experiment. Our aim was to obtain a value which characterises only the segregation of the impurity and is independent of experimental parameters. The problem is that the specimen composition at the GB is extremely inhomogeneous on an atomic scale in the case of Bi segregation at GBs in Cu. The analysed volume which is defined by the irradiated area and the beam broadening of the primary electron beam inside the specimen contains the interfacial plane as well as neighbouring bulk Cu. One approach is to put the focussed primary electron beam on the interface which is aligned edge on and acquire a spectrum. Both the primary beam diameter and the beam broadening inside the specimen have to be known.
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