Quantitative depth profiling of nitrogen in ultrathin oxynitride film with low energy SIMS

Abstract

It was shown that the thickness of ultrathin gate oxides measured with low energy O 2 + SIMS shows linear relationships with medium energy ion scattering spectroscopy (MEIS) and HRTEM results in the range of 9–2.5 nm. For quantitative N depth profiling, N profiles in ∼3 nm Si oxynitrides were measured by low energy O 2 + and Cs + SIMS and calibrated with MEIS analysis results of the thickness and the N areal density. N SIMS profiles observed for low energy O 2 + and Cs + SIMS showed some difference in the shape and distribution.