Abstract
The Al 3Hf phase was formed by Hf ions implantation into Al film with a current density of 64 μA/cm 2 to a dose of 7×10 17 ions/cm 2 using a metal vacuum vapor arc ion source. The surface hardness of Al film increased after Hf ions implantation. The quantitative depth profile of the formed Al 3Hf phase was obtained using the quantitative structure and phase depth profiling technique of X-ray diffraction patterns. In the surface layer of the sample, the content of Al 3Hf phase was about 67%. With the increase of depth, the content of Al 3Hf phase decreased. At the bottom of the Al film the content of Al 3Hf phase was about 5%.
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