Abstract
Quantitative depth Auger analysis of impurities in solids is based on relative sensitivity factors α m i which are necessary for evaluation of impurity concentration in a depth Z as a function of the ratio I m i ( Z) of impurity Auger intensity to that of a matrix element. Determination of α m i from the dose of an ion-implanted impurity does not ensure high accuracy due to possible systematic errors of dose measurement. This paper presents an alternative approach to evaluation of α m i , combining Auger profiles I m i ( Z) and electron probe X-ray microanalysis data for P and Sb in silica. The weight fraction of an impurity as a function of depth is expressed through α m i and I m i ( Z) and then is introduced into a formula relating the intensity of characteristic X-rays of impurity atoms, to their depth profile. The values of α m i is evaluated using the X-ray intensity of the impurity in a specimen as analysed relative to a standard (GaP, InP or GaSb, InSb).
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