Abstract
Deep level defects in the multi-quantum well (MQW) region of InGaN/GaN light emitting diodes (LEDs) were investigated. InGaN quantum well and GaN quantum barrier defect states were distinguished using bias-dependent steady-state photocapacitance and deep level optical spectroscopy, and their possible physical origin and potential impact on LED performance is considered. Lighted capacitance-voltage measurements provided quantitative and nanoscale depth profiling of the deep level concentration within the MQW region. The concentration of every observed deep level varied strongly with depth in the MQW region, which indicates evolving mechanisms for defect incorporation during MQW growth.
Published Version
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