Abstract
Several analytical techniques have been used to characterize homogeneous films of tungsten-containing hydrogenated carbon (W-C: H), deposited on Si with a film thickness of 1–1.5 μm. Electron probe microanalysis (EPMA) enables one to determine the major components W (3–43 at %) and C, impurities (< 2 at %) of Ar and O, and the mass thickness (300–1800 μg/cm2) of the films. The agreement between the results of EPMA and the data (W-content, mass thickness) provided by Rutherford backscattering spectrometry (RBS) is 5–10% relative. Quantitative analysis of hydrogen in W-C:H films (1–16 at %) is carried out by the technique of elastic recoil detection (ERD). A suitable scheme for the determination of H in W-C: H films by SIMS is proposed, based on monitoring the intensity ratio of HCs+/CCs+ secondary ions.
Published Version
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