Abstract
Silicon solar cells with cover glass irradiated by 1 MeV electron beams at various fluences were investigated using photocarrier radiometry (PCR) combined with lock-in carrierography (LIC, spectrally gated dynamic photoluminescence). The minority carrier transport properties (i.e., minority carrier lifetime τ, diffusion coefficient D, surface recombination velocities S) and the degradation of these properties were studied using PCR. The relative damage coefficient obtained by LIC was consistent with the PCR measurement. The local series resistance of the solar cell before and after irradiation was characterized by LIC. The results showed that the series resistance increased with electron fluences.
Published Version
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