Abstract
A simplified quantitative procedure for SIMS, based on the LTE (Local Thermal Equilibrium) model, was proposed and applied to Na concentration determination in Si and SiO2. The procedure validity was checked using In0.1Ga0.9As and PSG (phospho-silicate glass) films as standard samples. Na concentration determination was carried out using a Si wafer, whose CNa was measured by activation analysis. In the case of SiO2, borosilicate glasses were analyzed taking into account Na ionization yield. Then, Na distribution in SiO2 films was measured by SIMS and was compared with the total amount of Na in SiO2 films obtained by electrical measurement and Atomic Absorption Spectrophotometry (AAS).
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