Abstract
This paper reports the quantitative analysis of oxygen in GaAs epitaxial layers by a CAMECA IMS 300 secondary ion mass spectrometer. It is shown that the residual oxygen pressure of the apparatus (∼1×10 −7 torr) does not affect the analysis. On the basis of standard samples analysed by activation with tritons [ 16O(T,n) 18F] the limit of detection of oxygen in GaAs is found to be ∼0.01 ppm.at. Some results on oxygen depth profiling in epitaxial layers are presented.
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