Abstract
Low-frequency current oscillation (LFO) in semi-insulating (SI) GaAs has been precisely measured with the guard-ring method using three electrodes, in which the electric field is well defined and controlled, and furthermore the surface leakage current becomes low. It is found from the precise measurements of I-V characteristics, waveforms and frequencies of LFO that the LFO phenomenon is well explained by the electric field-enhanced electron capture model taking into account the ionized EL2 concentration. The temperature dependences of LFO are also quantitatively explained by the model.
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