Abstract
The performance indicators for a quantitative analysis (random and systematic uncertainties) are defined, and their origin in SIMS (secondary ion mass spectrometry) is discussed. The different methods for quantitative SIMS analysis: calibration curve approach, implanted standard method, relative sensitivity factor (RSF) method, are discussed. Examples are given for successful quantitative SIMS analyses of epilayers, implanted depth profiles and interface (IF) impurity distribution. In conclusion, a comparison is made between SIMS and other advanced techniques for thin film analysis.
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