Abstract
In this paper, we report a temperature-dependent photoluminescence study of the carrier thermal activation and redistribution in the QD heterostructures with different (i.e. InGaAs and GaAs) capping layers. Quantitative analysis of the carrier thermal activation and redistribution processes among the QDs with different capping layers was performed using rate equations. The rate equation model agrees well with the experimental observations for temperatures above 50 K. Relations between the radiative and nonradiative recombination rate ratio and the photo-excitation rate for the QDs with different capping layers are also determined.
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