Abstract
AbstractScanning probe microscopy is presently a useful tool to study a morphology of porous semiconductors. However, it serves to visualize existing roughness features of porous samples rather then to obtain some analytical data on shape, diameter and other geometrical parameters of the pores. In this work we show the possibilities of obtaining quantitative information on the porous silicon samples through application of a so‐called Spectroscopy of Stochastic Signals (3S) to their surface profiles obtained using AFM. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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